j.e.ii.e.li <^>.ml-(~onauetoi ij-* 10 ducts,, one. cx <_/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm15n05l, rfm15n06l, rfp15n05l, rfp15n06l power logic level mosfets n-channel logic level power field-effect transistors (l2 fet) 15 a, 50 and 60v ros(on):0.14n features: design optimized lor 5 volt gale drive can be driven directly from 0-mos, n-mos, ttl circuits compatible with automotive drive requirements soa is power-dissipation limited nanosecond switching speeds linear transler characteristics high input impedance majority carrier device terminal diagram n-channel enhancement mode the rfm15n05l and rfm15n06l and the rfp15nosl and rfp15n06l* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converter*, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power, these types can be operated directly from integrated circuits. the rfm-serlas types are supplied in the jedec to- 204aa steel package and the rfp-series types in the jedec to-220ab plastic package. because of space limitations branding (marking) on type rfp15n05l is f15no5l and on type RFP1SN06L is f15n06l. terminal designations rfm15n05l rfm1snosl rfp15nosl rfp15n06l jedec to-204aa jedec to-220ab maximum ratings, absolute-maximum valuas (fc ? 25 c): hfh15n05l rfm1sn06l rfp1sn05l RFP1SN06L drain-source voltage v0,s drain-gate voltage (r,. * 1 md) voor gate-source voltage v0s drain current, rms continuous to pulsed iom power dissipation @tc = !5c pi derate above tc = 26 c operating and storage temperature t,. t.,0 50 so 60 60 75 0.6 75 0.6 so 50 60 60 .40 . 60 0.46 60 0.48 . -55to*1so- v v v a a w w/?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfm15n05l, rfm15n06l, rfp15n05l, rfp15n06l electrical characteristics, at cm* t?mp?r?ture (tc - 25c) unlen otherwlta ipecllled characteristic drain-source breakdown voltage gate-threshold voltage zero-gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse-transfer capacitance turn-on delay time rise time turn-oil delay time fall time thermal resistance junctlon-to-case symbol bvoss vdsurn loss loss vos,onl? rosfonl* gt,' c,,, con ow tdlon) t, 1 atom ti rsjc test conditions id ? 1 ma vos = 0 vgs = vos in =? 1 ma vm ? 40 v vm = 50 v tc = 125 c v0, = 40 v ' vd5 = 50 v vqs = 10v vos = 0 i0 = 7.5a vos ? 5 v id = 15 a vos ? 5 v lo = 7.5a vas ? 5 v vos = 10v id = 7.5 a vos = 25 v v0? = 0 v f = 1 mhz vdd = 30 v lo = 7.5 a r,.? = ~ r0, = 6.25 n vas = 5 v rfm15n05l, rfm15n06l rfp15n05l, rfp15n06l limits rfm1sn05l rfp1sn05l min. 50 1 ? - ? ? ? ? 4.0 _ ? ? 16(typ) 250(typ) 200(typ) 225(typ) - - max. -? 2 1 50 100 1.125 3.0 0.14 _. 900 450 180 40 325 325 325 1.67 2.083 rfm15n06l rfp15n06l min. 60 1 ? - ? ? ? ? 4.0 ? ? ? 16(typ) 250(typ) 200(typ) 225(typ) - - max. ? 2 1 50 100 1.125 3.0 0.14 - 900 450 180 40 .325 325 325 1.67 2.083 units v v 0a na v n mho pf ns "c/w source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol v5d? in test conditions i60 = 7.5a if = 4a, d,f/d, = 100a/j/s limits rfm15n05l rfp15nosl min. - max. 1.4 225 (typ.) rfm15n06l rfp1snogl min. max. 1.4 226 (typ.) units v ns a pulsed: pulse duration = 300 fjs, duty cycle ~ 2%.
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